Abstract
AbstractThe energies in three combinations of Ag(001)/Si(111), Ag(011)/Si(111) and Ag(111)/Si(111) twist boundaries have been calculated using the modified embedded atom method (MEAM). The results show that the interface energies corresponding to Ag(111)/Si(111), Ag(001)/Si(111) and Ag(011)/Si(111) increase successively and the lowest energies 365, 717.7 and 996.1 mJ m−2 corresponding to each interface appear at twist angles θ of 30, 0 and 25.24°, respectively. Considering minimization of interface energy, we can conclude that the Ag films deposited on Si(111) substrate will result in a (111) preferred orientation, especially at a twist angle of θ = 30°. Copyright © 2005 John Wiley & Sons, Ltd.
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