Abstract
Crystal-phase low-dimensional structures offer great potential for the implementation of photonic devices of interest for quantum information processing. In this context, unveiling the fundamental parameters of the crystal phase structure is of much relevance for several applications. Here, we report on the anisotropy of the g-factor tensor and diamagnetic coefficient in wurtzite/zincblende (WZ/ZB) crystal-phase quantum dots (QDs) realized in single InP nanowires. The WZ and ZB alternating axial sections in the NWs are identified by high-angle annular dark-field scanning transmission electron microscopy. The electron (hole) g-factor tensor and the exciton diamagnetic coefficients in WZ/ZB crystal-phase QDs are determined through micro-photoluminescence measurements at low temperature (4.2 K) with different magnetic field configurations, and rationalized by invoking the spin-correlated orbital current model. Our work provides key parameters for band gap engineering and spin states control in crystal-phase low-dimensional structures in nanowires.
Highlights
S (NWs) represent a promising platform to implement quantum computation and quantum information processing[1,2] and this specific implementation, NWs, provides a versatile material system to demonstrate innovative nanoscale devices, such as lasers, photo-sensors and solar cells [3,4,5,6,7,8,9]
We investigate the g-factor tensor of WZ/ZB crystal-phase quantum dots (QDs) formed in InP NWs by carrying out angle-dependent magneto-photoluminescence (PL) experiments with a vector magnetic field system at 4.2 K
The weakness or missing of the emission peaks with power increasing is due to the competition between QDs in NW or PL quenching for single dot by high excitation power, which is normal for single quantum dots at high excitation power
Summary
Quantum wells and quantum dots (QDs) realized in semiconductor nanowires (NWs) represent a promising platform to implement quantum computation and quantum information processing[1,2] and this specific implementation, NWs, provides a versatile material system to demonstrate innovative nanoscale devices, such as lasers, photo-sensors and solar cells [3,4,5,6,7,8,9] In this frame, compared to other semiconductor NW systems, InP NWs display a lower susceptibility to non-radiative surface states and a stronger photoluminescence (PL) emission: this material system is of particular interest for quantum-photonics application [10,11,12,13,14,15,16,17]. Our findings provide crucial parameters for the exploitation of crystal-phase QDs in quantum devices, and pave the way to a novel approach for controlling the spin properties, such as controlling the spin precession or driving spin resonance by modifying the g-factor tensor
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