Anisotropic Van Der Waals 2D GeAs Integrated on Silicon Four-Waveguide Crossing

Abstract

In-plane optical anisotropy plays a critical role in manipulating light in a wide range of planner photonic devices. In this study, the strong anisotropy of multilayer 2D GeAs is leveraged and utilized to validate the technical feasibility of on-chip light management. A 2D GeAs is stamped into an ultra-compact silicon waveguide four-way crossing optimized for operation in the O-optical band. The measured optical transmission spectra indicated a remarkable discrepancy between the in-plane crystal optical axes with an attenuation ratio of ∼3.5 (at 1330 nm). Additionally, the effect of GeAs crystal orientation on the electro-optic transmission performance is demonstrated on a straight waveguide. A notable 50% reduction in responsivity was recorded for devices constructed with cross direction compared to devices with a crystal <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">a</i> -direction parallel to the light polarization. This extraordinary optical anisotropy, combined with a high refractive index ∼4 of 2D GeAs, opens possibilities for efficient on-chip light manipulation in photonic devices.