Abstract
We present magneto-photoluminescence experiments on a multi-quantum-barrier structure consisting of 31 period of wide (58 nm) quaternary wells of InGaAsP with the same lattice parameter as InP separated by thin (8 nm) InP barriers. The anomalous diamagnetic shift and the asymmetric broadening of the luminescence spectra evidence strong band filling in the tail of the density of states of the quaternary alloy, suggesting that tunneling transport through the InP barrier is anisotropic along the growth axis, due to different band lineups for the direct (InGaAsP-on-InP) and inverse (InP-on-InGaAsP) interfaces. This finding is supported by high resolution X-ray patterns, yielding evidence that the direct and inverse interfaces are smooth and display different chemical compositions.
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