Abstract
TaSb2 has been predicted theoretically to be a weak topological insulator. Whereas, the earlier magnetotransport experiment has established it as a topological semimetal. In the previous works, the Shubnikov-de Haas oscillation has been analyzed to probe the Fermi surface, with magnetic field along a particular crystallographic axis only. By employing a sample rotator, we reveal highly anisotropic transverse magnetoresistance by rotating the magnetic field along different crystallographic directions. To probe the anisotropy in the Fermi surface, we have performed magnetization measurements and detected strong de Haas-van Alphen (dHvA) oscillations for the magnetic field applied along a and b axes as well as perpendicular to ab plane of the crystals. Three Fermi pockets have been identified by analyzing the dHvA oscillations. With the application of magnetic field along different crystal directions, the cross-sectional areas of the Fermi pockets have been found significantly different, i.e., the Fermi pockets are highly anisotropic in nature. Three-band fitting of electrical and Hall conductivity reveals two high mobility electron pockets and one low mobility hole pocket. The angular variation of transverse magnetoresistance has been qualitatively explained using the results of dHvA oscillations and three-band analysis.
Highlights
Inclusion of topology in electronic band structure has opened-up a new era in condensed matter research[1,2]
It is important to acquire the knowledge of Fermi surface to explain different electronic properties of a material
Every further investigation is complementary to the previous results on the electronic band topology of TaSb2
Summary
Inclusion of topology in electronic band structure has opened-up a new era in condensed matter research[1,2]. The nature and geometry of the Fermi surface can modify the electronic transport significantly in a material Such as, the anisotropic magnetoresistance has been ascribed to the anisotropy of the Fermi surface[12,13,14]. Every further investigation is complementary to the previous results on the electronic band topology of TaSb2 Apart from this unconventional nature of electronic band structure, large magnetoresistance and the presence of two or three Fermi pockets depending on the position of the Fermi level, have been reported in earlier works by analysing the Shubnikov-de Haas (SdH) oscillation for magnetic field along one of the crystallographic axes[15,17,18]. Directions on the same single crystal and by analysing the de Haas-van Alphen (dHvA) oscillation, we report the anisotropic nature of the Fermi pockets
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