Abstract
The anisotropic transport properties of quantum dot arrays fabricated by the nanoimprinted multilayer quantum wires have been investigated. The vertical transport characteristics are estimated by the carrier capture time from the electron reservoir to the low dimensional structures, which turned out to be longer than the spontaneous emission lifetime. The lateral transport characteristics are modeled after the quantum conductance between quantum dot arrays which are readily available from the miniband structures. The resulting lateral transport revealed that lateral quantum conductance can be minimized when the Fermi level is kept at the center of the miniband gap when the gap is larger than 4kT.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
