Abstract
We report on the transport properties of quantum wire-like GaAs/AlGaAs heterostructures, obtained by organometallic chemical vapor deposition of a modulation-doped quantum well structure on a submicron grating, etched in the substrate prior to growth. Shubnikov–deHaas and mobility measurements show that the electron gas is preserved in the grating areas and that transport parallel to the grating is not severely degraded as compared to an unpatterned control sample. Perpendicular to the grating the mobility strongly decreases at low temperatures, leading to an anisotropy ratio of 1:200. The temperature dependence of the perpendicular mobility indicates strong boundary scattering at the GaAs/AlGaAs interfaces.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
