Abstract
We present a study of the structural and electronic properties of ultrananocrystalline diamond films that were modified by adding nitrogen to the gas mixture during chemical vapor deposition growth. Hall bar devices were fabricated from the resulting films to investigate their electrical conduction as a function of both temperature and magnetic field. Through low-temperature magnetoresistance measurements, we present strong evidence that the dominant conduction mechanism in these films can be explained by a combination of three-dimensional weak localization (3DWL) and thermally activated hopping at higher temperatures. An anisotropic 3DWL model is then applied to extract the phase-coherence time as a function of temperature, which shows evidence of a power-law dependence in good agreement with theory.
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