Abstract

Zirconium diboride (ZrB2) is an attractive material due to its thermal and electrical properties. In recent years, ZrB2 has been investigated as a superior replacement for sapphire when used as a substrate for gallium nitride devices. Like sapphire, ZrB2 has an anisotropic hexagonal structure which defines its directionally dependent properties. However, the anisotropic behavior of ZrB2 is not well understood. In this paper, we use energy-dispersive synchrotron X-ray diffraction to measure the thermal expansion of polycrystalline ZrB2 powder from 300 to 1150 K. Nine Bragg reflections are fit using Pseudo-Voigt peak profiles and used to compute the a and c lattice parameters using a nonlinear least-squares approximation. The temperature-dependent instantaneous thermal expansion coefficients are determined for each a-axis and c-axis direction and are described by the following equations: αa = (4.1507×10-6 + 5.1086 × 10-9(T-293.15))/(1+4.1507 × 10-6(T-293.15) + 2.5543×10-9(T-293.15)2) and αc = (4.5374×10-6 + 4.3004×10-9(T-293.15))/(1+4.5374×10-6(T-293.15) + 2.1502×10-9(T-293.15)2). Our results are within range of previously reported values but describe the temperature anisotropy in more detail. We show that anisotropic expansion coefficients converge to the same value at about 780 K and diverge at higher temperatures. Results are compared with other reported values.

Highlights

  • Zirconium diboride (ZrB2) is a with a melting temperature of nonoxide ceramic material 3245∘C and high electrical conductivity (107 S⋅m−1) [1]

  • The pioneering work by Kinoshita and coworkers was able to show that ZrB2 is a viable substrate for gallium nitride (GaN) electronics

  • Milman et al performed a molecular dynamics study and calculated values of thermal expansion that were within range of previous reports

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Summary

Introduction

Zirconium diboride (ZrB2) is a with a melting temperature of nonoxide ceramic material 3245∘C and high electrical conductivity (107 S⋅m−1) [1]. The pioneering work by Kinoshita and coworkers was able to show that ZrB2 is a viable substrate for GaN electronics They grew single crystals of ZrB2 using a float zone method and measured the coefficient of thermal expansion along the a direction [4, 5]. Milman et al performed a molecular dynamics study and calculated values of thermal expansion that were within range of previous reports While they mention that Okamoto’s results show anisotropy and temperature dependence, they were unable to address these features within their experimental framework [8]. Particular focus is given to the anisotropic effects of ZrB2’s hexagonal lattice and the temperature dependence of thermal expansion

Experimental
Results and Discussion
A Lattice parameter c B
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