Abstract
The continued importance of strain engineering in semiconductor technology demands fast and reliable stress metrology that is non-destructive and process line-compatible. Raman spectroscopy meets these requirements but the diffraction limit prevents its application in current and future technology nodes. We show that nano-focused Raman scattering overcomes these limitations and can be combined with oil-immersion to obtain quantitative anisotropic stress measurements. We demonstrate accurate stress characterization in strained Ge fin field-effect transistor channels without sample preparation or advanced microscopy. The detailed analysis of the enhanced Raman response from a periodic array of 20 nm-wide Ge fins provides direct access to the stress levels inside the nanoscale channel, and the results are validated using nano-beam diffraction measurements.
Highlights
We show that precisely this enhancement in nano-focused Raman scattering can be combined with oil-immersion, readily providing accurate insight into the stress state of fins for fin field-effect transistor channels in a non-destructive manner
We demonstrate that under correct interpretation, the stress can be quantified by the analysis of the enhanced Raman longitudinal optical (LO) and transverse optical (TO) modes, leading to fast and non-invasive characterization of stress in nanoscale semiconductor channels
The structure consists of a 30 nm-thick strained Ge layer grown on top of a thick strain-relaxed Si0.3Ge0.7 buffer on a (001) Si substrate.[18,19]
Summary
Anisotropic stress in narrow sGe fin fieldeffect transistor channels measured using nano-focused Raman spectroscopy
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