Abstract
Spatial correlation of five- and ten-fold stacks of CdSe quantum dots separated by Zn(S)Se spacers with different thicknesses has been investigated in plan-view and cross-section geometry using transmission electron microscopy and compared with grazing incidence x-ray results. For different spacer layer thicknesses investigations revealed a strain induced ordering process which breaks down for spacer layers thicker than 8 nm. An anisotropy of the lateral alignment of the quantum dots was also found, connected with the anisotropic strain distribution around the quantum dots and surface diffusion. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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