Abstract
Multiple spin functionalities are probed on Pt/La2Co0.8Mn1.2O6/Nb:SrTiO3, a device composed by a ferromagnetic insulating barrier sandwiched between non-magnetic electrodes. Uniquely, La2Co0.8Mn1.2O6 thin films present strong perpendicular magnetic anisotropy of magnetocrystalline origin, property of major interest for spintronics. The junction has an estimated spin-filtering efficiency of 99.7% and tunneling anisotropic magnetoresistance (TAMR) values up to 30% at low temperatures. This remarkable angular dependence of the magnetoresistance is associated with the magnetic anisotropy whose origin lies in the large spin-orbit interaction of Co2+ which is additionally tuned by the strain of the crystal lattice. Furthermore, we found that the junction can operate as an electrically readable magnetic memory device. The findings of this work demonstrate that a single ferromagnetic insulating barrier with strong magnetocrystalline anisotropy is sufficient for realizing sensor and memory functionalities in a tunneling device based on TAMR.
Highlights
The ever-increasing demand for storage and high speed processing of large amounts of data boost the search for new materials/paradigms for improving current microelectronics and magnetic storage technologies and put forward spintronics as a promising technology
We have shown that LCMO grown under tensile strain exhibits a strong perpendicular magnetic anisotropy (PMA), which has a magnetocrystalline origin due to the spin-orbit coupling (SOC) in Co2+ ions[20,21]
In our junctions, PMA has been proved by low-temperature (77 K) magnetic force microscopy (MFM) imaging (Fig. 1b)
Summary
The magnetic field dependence of the resistance of a 200 μm[2] junction with a 2 nm-thick LCMO barrier at 10 K is shown in Fig. 3a for a field applied both in-plane (IP) and out-of-plane (OOP). The in-plane configuration exhibits the aforementioned linear dependence due to the Zeeman effect (see Fig. 3b (inset)) In this case, the fitted barrier height and exchange splitting are 1.27 eV and 0.2 eV, respectively, while we obtain α = 0.08 meV/T. This system is unique and much simpler, in the sense that it is based on only one magnetic layer and TAMR capabilities
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