Anisotropic Radiation in Heterostructured "Emitter in a Cavity" Nanowire.

Alexey Kuznetsov,Konstantin P. Kotlyar,George E. Cirlin,Valeriy M. Kondratev,Ivan S. Mukhin,Vladimir V. Fedorov,Alexander A. Vorobyev,Prithu Roy,Rodion R. Reznik,Alexey D. Bolshakov

doi:10.3390/nano12020241

Alexey Kuznetsov, Konstantin P. Kotlyar + Show 8 more

Open Access

https://doi.org/10.3390/nano12020241

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Abstract

Tailorable synthesis of axially heterostructured epitaxial nanowires (NWs) with a proper choice of materials allows for the fabrication of novel photonic devices, such as a nanoemitter in the resonant cavity. An example of the structure is a GaP nanowire with ternary GaPAs insertions in the form of nano-sized discs studied in this work. With the use of the micro-photoluminescence technique and numerical calculations, we experimentally and theoretically study photoluminescence emission in individual heterostructured NWs. Due to the high refractive index and near-zero absorption through the emission band, the photoluminescence signal tends to couple into the nanowire cavity acting as a Fabry–Perot resonator, while weak radiation propagating perpendicular to the nanowire axis is registered in the vicinity of each nano-sized disc. Thus, within the heterostructured nanowire, both amplitude and spectrally anisotropic photoluminescent signals can be achieved. Numerical modeling of the nanowire with insertions emitting in infrared demonstrates a decay in the emission directivity and simultaneous rise of the emitters coupling with an increase in the wavelength. The emergence of modulated and non-modulated radiation is discussed, and possible nanophotonic applications are considered.

Highlights

Introduction published maps and institutional affilNowadays, nanophotonic structures play an important role in the development of future information technologies as key elements of integrated optical circuitry [1]
Axial Gallium phosphide (GaP)/GaPAs NW heterostructures were grown via the self-catalyzed vapor–liquid–solid (VLS) mechanism on Si (111) substrates using solid-source molecular beam ep3 of 13 itaxy (MBE) Veeco GEN-III system
It should be noted that on the close-up SEM image presented in Figure 1c, a contrast between the GaP segments and GaPAs NDs can be distinguished, which indicates the formation of axial heterojunctions in the grown NW

Summary

Introduction

Nanophotonic structures play an important role in the development of future information technologies as key elements of integrated optical circuitry [1]. Advanced photonic solutions have a remarkable impact on the semiconductor industry, allowing for the generation, processing and transmission of optical signals at the nanoscale [2]. This field is known to be the most promising in terms of energetic efficiency and an increase in operating frequencies. The developed epitaxial growth techniques allow for the synthesis of vertically stacked QD arrays in wide-gap thin-film matrices [4]. Despite the lack of lateral arrangement, these nanoheterostructures have been successfully employed in efficient lasers and other optoelectronic devices [5,6]

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