Abstract
Polytetrafluoroethylene (PTFE) has attention in the field of Lab-on-a-chip (LOC) and micro total analysis system (μTAS), having high heat and chemical resistance compared with other plastic materials. SR-ablation process accompanying with heating of PTFE substrate enable the direct fabrication of high-aspect-ratio microstructure. However, the etching process has characteristics that misalignment of the pattern arises due to thermal expansion of PTFE substrate. In this study, we present here anisotropic pyrochemical etching which is performed by heating PTFE substrate after X-ray irradiation at the room temperature. The processing characteristics of PTFE substrate was investigated.
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