Abstract
The phonon anisotropy property of the GaN wurtzite crystal is studied using angular dependent Raman spectroscopy both theoretically and experimentally. The polarized Raman scattering spectra were recorded from cross-sections of c-axis oriented GaN films as a function of the angle between the incident laser polarization direction and the film normal direction in three different configurations. The Raman intensity of A1(TO) showed a sinusoidal dependence on the rotating angle, as also did the E1(TO) mode, while the E2 mode has a quite different behavior. The theoretical fit takes into account the susceptibility contribution and the phase differential of different vibrating elements.
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