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Abstract
a-axis oriented AlN thin films sandwiched between Ti-electrodes were prepared on Si (100) substrates using ion beam sputtering in reactive assistance of N2-plasma. Piezoelectric response of such Ti/AlN/Ti heterostructures was investigated using XRD under applied voltage varying from +1 V to +5 V. External electric field induced strain in film microstructure was used to estimate the longitudinal piezoelectric coefficient d33eff. Our results show that AlN thin films with a preferred orientation along a-axis possess enhanced value of d33eff = 560.5±68 pm/V. A phenomenological model is proposed to account this enhancement by considering the dielectric an elastic continuum with Al+— N−— Al+ quadruples as the constituent unit of the Cosserat medium.
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