Anisotropic photoelectric properties in GaN/AlN quantum dots under terahertz laser polarization

Abstract

The linear and nonlinear anisotropic optical absorption coefficients(OACs) and refractive index changes(RICs) of GaN/AlN cubical quantum dots(CQDs) subjected to terahertz laser field(TLF) are investigated. The results show that under the polarization of TLF, with the increase of laser dressing parameters, the peak of OACs and RICs increases nonlinearly and have a redshift. More importantly, our work indicated that with the enhancement of TLF polarization, the redistribution of electron excited state wave function will lead to the “loss” of optical properties in the specific frequency band. The redistribution of electron ground state wave function has a significant modulation effect on the magnitude of OACs(RICs) peak. • The enhancement of the refractive index changes was observed at low frequencies. • The phenomenon of wave function exchange in laser field modulation is found. • The modulation of laser field on optical coefficient cannot cover the whole frequency band.