Abstract
The anisotropy of the thermal oxidation of Silicon Carbide has been investigated. Wet oxidation of a sphere of 6H SiC and dry oxidation of homoepitaxial CVD layers of 4H and 6H SiC were carried out. Afterwards, the oxide thickness and the interfacial structure was analyzed by Rutherford backscattering spectrometry, cross-sectional transmission electron microscopy and high-resolution transmission electron microscopy. After oxidation the sphere showed an impressive image of interference colors in different crystallographic orientations due to different oxide thicknesses. Additional microscopic studies of the oxidized epitaxial layers show a rough interface between SiC and SiO2. Continuous oxidation of bilayers on a large scale is not observed.
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