Abstract
In-plane optical anisotropies in compressively strained III–nitride quantum wells on semipolar and nonpolar substrates are numerically calculated using the 6×6 k· p Hamiltonian. It is shown that quantum confinement and compressive strain have the opposite effects on the anisotropies, and that the in-plane polarization degree is determined by the competition of these two effects. These characteristics are also verified by analytical calculation, and it is found that the signs of (A4-A5) and (D4-D5) are essential factors in determining the above-mentioned polarization properties, where A4 and A5 are valence band parameters and D4 and D5 are deformation potentials. On the basis of the calculation results, the structural design of laser diodes on semipolar and nonpolar substrates is also discussed.
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