Abstract
The ballistic conductance of Fe/MgO/Fe magnetic tunnel junctions depends significantly onthe direction of the magnetization in the leads, as is investigated by relativistic first-principleselectronic structure and transport calculations. The rotation of the parallel aligned leadmagnetizations from in-plane to perpendicular orientation with respect to the interfaces, thatis tunnel anisotropic magnetoresistance (TAMR), increases the zero-bias conductance by about30%. The effect originates from both the Rashba spin–orbit interaction at the interfaces andfrom resonant tunneling. Spin–orbit induced band gaps in the leads show no considerableeffect on the anisotropic magnetoresistance. The tunnel magnetoresistance (TMR), i.e. thedependence of the conductance on the mutual angle between the lead magnetizations, isalso addressed.
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