Abstract
Ag-induced missing dimer vacancies on Si(001)2 × 1 surfaces are shown to form vacancy lines when the vacancy concentration is larger than ∼10%. The formation of the vacancy lines is driven by the short-range attractive interaction between the vacancies in adjacent dimer rows and the long-range repulsive interaction between them in the same dimer row. The form and magnitudes of the interactions are derived from the thermally-excited wandering of the vacancy lines.
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