Abstract
We calculate the hole scattering rate owing to the interaction with polar optical phonons and ionized impurities in bulk wurtzite GaN. The valence band states of this hexagonal material are obtained from a matrix Hamiltonian. The calculated scattering rate shows strong orientational dependence with respect to the crystal c-axis. Analysis shows that both anisotropy in the dispersion relations and the Bloch overlap factors are important for a proper description of hole scattering.
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