Abstract
We have reported a method of fabricating (111)-orientated nanotwinned copper (nt-Cu) by direct current electroplating. X-ray analysis was performed for the samples annealed at 200 to 350 °C for an hour. X-ray diffraction indicates that the (200) signal intensity increases while (111) decreases. Abnormal grain growth normally results from transformation of surface energy or strain energy density. The average grain size increased from 3.8 µm for the as-deposited Cu films to 65–70 µm after the annealing at 250 °C for 1 h. For comparison, no significant grain growth behavior was observed by random Cu film after annealing for an hour. This research shows the potential for its broad electric application in interconnects and three-dimensional integrated circuit (3D IC) packaging.
Highlights
Copper has been widely used as a replacement for aluminum in the electronics industry due to its low resistivity and ideal mechanical properties [1,2]
Materials 2020, 13, 134 extremely large anisotropic grain growth occurred in (111)-oriented nanotwinned Cu films fabricated by pulsed electrodeposition [29]
The electron backscatter diffraction (EBSD) grain morphology on the top surface and the width of the focused ion beam (FIB) image for the Cu film annealed at 350 °C
Summary
Copper has been widely used as a replacement for aluminum in the electronics industry due to its low resistivity and ideal mechanical properties [1,2]. In the last few decades, there has been a dramatic proliferation of research related to the mechanism of crystal growth, since it affects the properties of crystal structure in the thermal annealing process [7,8,9,10,11,12,13,14,15,16,17]. Materials 2020, 13, 134 extremely large anisotropic grain growth occurred in (111)-oriented nanotwinned Cu films fabricated by pulsed electrodeposition [29]. We report a new process to reduce the heat treatment temperature for anisotropic grain growth to prepare a single crystal Cu film. If the large grain growth of the nanotwinned crystal can be utilized, we can lower the overall resistance by reducing grain boundaries.
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