Abstract
A new Al etching technique is described that uses an ion beam from a Kaufman ion source and a directed Cl2 flux. The ion beam is used primarily to remove the native oxide to allow the Cl2 to spontaneously react with the Al film forming volatile Al2Cl6. By controlling both the flux equivalent pressure of Cl2 and the ion beam current, this etching technique makes possible the anisotropic etching of Al with etch rates from 100 nm min−1 to nearly 10 μm min−1 with a high degree of selectivity.
Published Version
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