Abstract
Abstract An analysis of the anisotropic etch-stop properties of buried layers obtained by sub-stoichiometric nitrogen implantation into silicon and annealing has been performed as a function of the processing parameters. The aim of this work is to determine the minimum implantation dose needed for the formation of etch-stop layers stable under high-temperature thermal processing, needed in smart-sensor Si technology, using tetramethyl ammonium hydroxide (TMAH) as etchant in a way that is compatible with CMOS. The results obtained show this value to be in the range (2–4) × 1017 N cm−2 for an effective N+ implantation energy of 75 keV. After annealing, etching of the N-rich buried layer occurs through localized pitch discontinuities determined by the implantation and annealing processes.
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