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Abstract
Strain-balanced quantum well solar cells (SB-QWSC) extend the photon absorption edge beyond that of bulk GaAs by incorporation of quantum wells in the i-region of a pin device. The strain-balanced quantum well solar cell benefits from a fundamental efficiency enhancement due to anisotropic emission from the quantum wells. This anisotropy arises from a splitting of the valence band due to compressive strain in the quantum wells, suppressing a transition which contributes to emission from the edge of the quantum wells. We have studied both the emission light polarized in the plane perpendicular (TM) to the quantum well which couples exclusively to the light hole transition and the emission polarized in the plane of the quantum wells (TE) which couples mainly to the heavy hole transition. It was found that the spontaneous emission rates TM and TE increase when the quantum wells are deeper. We have also demonstrated that the photo-generated carriers can escape from the QWs with near unity efficiency, via a thermally-assisted tunneling process, because gain is several orders greater than radiative recombination.
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