Abstract
NiO x /β-Ga2O3 p-n heterojunctions fabricated on and β-Ga2O3 substrates show distinctly anisotropic electrical properties. All three devices exhibited excellent rectification ≥109, and turn-on voltages >2.0 V. The device showed very different turn-on voltage, specific on-resistance, and reverse recovery time compared with and devices. Moreover, it is calculated that the interface trap state densities for and plane devices are 4.3 × 1010, 7.4 × 1010, and 1.6 × 1011 eV–1cm–2, respectively. These differences in the NiO x /β-Ga2O3 heterojunctions are attributed to the different atomic configurations, the density of dangling bonds, and interface trap state densities.
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