Abstract
The structural properties of pseudomorphic In0.23Ga0.77As/GaAs single quantum wells are investigated with x-ray double-crystal diffractometry. Anisotropic tilting of lattice planes along dislocations and anisotropic reflectivity of fully relaxed domains coexisting with strained domains are reported for the first time. Due to the anisotropic strain relaxation the crystal symmetry changes from tetragonal in the fully strained case to monoclinic in a partially relaxed quantum well.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
