Anisotropic and high carrier mobility of 2D α-te

Abstract

Owing to the exotic properties of two-dimensional (2D) materials, a number of new candidates are adding up in the family of 2D materials. Recently, monolayer of tellurium referred as tellurene is emerging as new contenders in 2D materials for various applications. In this paper, we have investigated the electronic structure and carrier mobility of α- phase of tellurene using first principles theory together with deformation potential theory and effective mass approximation. Electronic band structure calculations show α-Te to be indirect gap semiconductor. Our study suggest that the carrier mobility of α-Te is anisotropic and relatively high compared to transition metal dichalcogenides. Combining semiconducting property with high anisotropic carrier mobility, α-Te finds application in nanoelectronic devices.