Year-end Sale % OFF 
Abstract
Combining density-functional perturbation theory with the frozen-phonon approach, the anharmonic shift of the Raman frequency of the covalent semiconductors diamond and silicon are determined ab initio. The temperature dependence of the Raman frequency and the contribution of zero-point motion are calculated as well as the Raman linewidth. Corresponding results for germanium have been obtained with the assumption that the quartic anharmonic force constants may be approximated by those of silicon.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
