Angular dependence of the magnetoresistance of TiSi 2 single crystals

Abstract

We measured the transverse magnetoresistance Δϱ ϱ of good quality TiSi 2 single crystals at low temperatures (4.2≤ T≤112 K) in magnetic fields up to 7.8 Tesla. Single crystals were produced by a modified Czochralski pulling technique and they have low residual resistivity (typically ϱ(4.2 K) = 0.15 μΩ· cm ) and high residual resistance ratio (typically RRR > 50). The angular dependence of magnetoresistance shows either minima or maxima when the magnetic field is parallel to the principal crystallographic axes. At high fields ( B > 1 T). we found that the magnetoresistance has a magnetic field dependence weaker than the B 2 law expected for compensated metals. At 7.8 T, the values of ω c τ obtained are of the order of unity. The Kohler scaling rule is observed within three orders of magnitude of the reduced parameter B ϱ (where ϱ is the zero field resistivity measured between 4.2 and 112 K).