Angular dependence of sputtering yield of TiSi2 layers and analysis of titanium disilicide by SIMS and SCANIIR methods

Abstract

AbstractThe values of sputtering yields of TiSi2, Ti and Si layers are determined for Ar+ (8 keV) bombardment at angles 0–80°. It is shown that the theoretical functions that we have suggested for TiSi2 sputtering yields from angular Ar+ bombardment, which are based on models of bicomponent compounds sputtering under normal ion bombardment, are in good agreement with the experimental curve for TiSi2.The calibration curves for the determination of TiSix layer compositions by SIMS and SCANIIR methods (in dynamic regime) are presented. It is shown with the help of the static SIMS method (E = 3 keV) that not only can the TiSix composition be determined but the TiSi2 crystal phase can also be identified.