Angled stripe InGaAsP/InP SLED fabricated by low-damage inductively coupled plasma dry etching

Abstract

Abstract: We successfully fabricated the angled strip DC-PBH style SLED devices by using low damage ICP dry etching technology. The mesa of DC-PBH SLED was formed by Cl 2 /N 2 ICP dry etching process. The low DC bias (<100 eV) of ICP etching technology can reduce the damage caused by ordinary RIE technique and Cl 2 /N 2 based process can get rid of chemical damage caused by CH 4 /H 2 . High out-put power SLED device was obtained by using low damage ICP dry etching, the out-put power is 2 mW at 100 mA inject current (CW) at 25 °C. Through optimized the angle of the active strip and AR optical film design, the full width of the half maximum (FWHM) of the spectrum at 2 mW out-put power can reach 46.4nm and the ripple of the SLED spectrum is low down to 0.4 dB. Key words: ICP, dry etch, low damage, double channel, SLED 1. Introduction Superluminescent emitting diodes (SLED) are kinds of devices that can provide high out-put power with short coherent length and narrower beam divergence than light emitting diodes (LED). SLED can be used in some fields such as fiber gyroscopes