Abstract
AbstractAngle-resolved X-ray photoelectron spectroscopy characterization of the surface region of high-dose Sb+ ion implanted silicon, after rapid thermal treatments over various temperatures, is reported. The results obtained are compared with the Rutherford backscattering data and the capacitance-voltage measurements on the metal-oxide-semiconductor mesa structures built on them. Rapid anneal at 1100 °C of the 1.4×1016 Sb+/cm2 samples showed an anomalous deep oxygen diffusion inside the implanted region.
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