Abstract
The paper reviews the non-destructive depth profiling of the composition and the chemical structure of ultrathin oxynitride films and ultrathin silicon nitride films using angle-resolved photoelectron spectroscopy. Depth profiles of nitrogen atoms in silicon oxynitride films were determined by applying the maximum entropy concept to angle-resolved photoelectron spectra. The layered structures of silicon nitride films formed using nitrogen-hydrogen radicals were determined by measuring soft X-ray excited angle-resolved photoemission from Si 2p, N 1s, and O 1s core levels with the same probing depth.
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