Abstract
We investigated on the chemical bonding states of thermally oxidized SiO2/SiC in detail by the angle-resolved X-ray photoemission spectroscopy (AR-XPS). Analyses of Si 2p, C 1s and O1s spectra show that the signal arising from sub-oxide is detected, and that the signals related carbon in SiO2 and C-C in SiC are detected. We also characterized SiO2/4H-SiC by Hard X-ray photoemission spectroscopy (HAX-PES) in order to check the depth profile of carbon in oxide in detail.
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