Angle-dependent ion-beam etching of RuAl thin films for structuring GHz-frequency electronics

Abstract

The ruthenium aluminide (RuAl) alloy is a promising electrode material for wireless surface acoustic wave sensors working under harsh conditions at high temperatures. However, during the structuring of RuAl thin films using ion-beam etching, etched material can redeposit at the edges of the electrodes and form objects, so-called fences, on top of the structured features. These decrease the high-temperature stability and lead to an undesired alteration of the sensor performance. In this work, the angle-dependent ion-beam etching of RuAl thin films was investigated to inhibit the formation of such fence structures. The etch rate was determined as a function of the etching angle between ion-beam and sample surface in a range between 90° and 40°. Furthermore, finger structures with pitches below 500 nm, which are required for devices working in the intended GHz regime, were patterned to study the influence of the etching angle on the profile of the RuAl electrode fingers using transmission electron microscopy and energy-dispersive x-ray spectroscopy. The results show that an etching angle of 50° results in the highest etch rate. For etching angles of 50° and below, the width of the fences is reduced below 10 nm, so they break off during standard resist removal procedures. Such low etching angles lead to shadowed areas on the side of structured features in which unetched material remains. However, this material can be removed by using a two-step etching process combining a 50° step with a 90° step. This process is capable of structuring fence-free trapezoidal-shaped electrode finger profiles. Therefore, the developed process is well suited for the fabrication of high-temperature GHz-frequency RuAl electrodes.