Angle-dependent bandgap engineering in gated graphene superlattices

H. García-Cervantes,L. M. Gaggero-Sager,I. Rodríguez-Vargas,O. Sotolongo-Costa,G. G. Naumis

doi:10.1063/1.4944495

H. García-Cervantes, L. M. Gaggero-Sager + Show 3 more

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https://doi.org/10.1063/1.4944495

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Abstract

Graphene Superlattices (GSs) have attracted a lot of attention due to its peculiar properties as well as its possible technological implications. Among these characteristics we can mention: the extra Dirac points in the dispersion relation and the highly anisotropic propagation of the charge carriers. However, despite the intense research that is carried out in GSs, so far there is no report about the angular dependence of the Transmission Gap (TG) in GSs. Here, we report the dependence of TG as a function of the angle of the incident Dirac electrons in a rather simple Electrostatic GS (EGS). Our results show that the angular dependence of the TG is intricate, since for moderated angles the dependence is parabolic, while for large angles an exponential dependence is registered. We also find that the TG can be modulated from meV to eV, by changing the structural parameters of the GS. These characteristics open the possibility for an angle-dependent bandgap engineering in graphene.

Highlights

Bandgap engineering or band structure engineering is a term coined in the late eighties to refer to a powerful technique for the design of new semiconductor materials and device.[1]
Our results show that the angular dependence of the Transmission Gap (TG) is intricate, since for moderated angles the dependence is parabolic, while for large angles an exponential dependence is registered
We find that the TG can be modulated from meV to eV, by changing the structural parameters of the Graphene Superlattices (GSs)

Summary

Introduction

Bandgap engineering or band structure engineering is a term coined in the late eighties to refer to a powerful technique for the design of new semiconductor materials and device.[1]. Postal 20-364, 01000, México D.F., México 4Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, Zac., México (Received 1 February 2016; accepted 4 March 2016; published online 14 March 2016)

Results

Conclusion