Abstract
The estimation of average lifetime has been considered as a serious reliability concern for VLSI components. However, with the tremendous downscaling of MOSFET devices, it becomes very difficult to predict such measure with satisfactory precision due to the amplified parasitic effects at the deep scale level. The present work aims at investigating the efficiency of adaptive neuro-fuzzy inference system approach as a predictor of junctionless gate all around MOSFET device lifetime. Our predictions are compared versus the numerical results obtained by ATLAS simulator, where a good agreement is obtained.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
