Anelastic Internal Friction and Mechanical Spectroscopy of SiO2/Si Wafers

Abstract

In this work, after electron irradiation and X-ray, the outcomes of the evaluation dynamic characteristics of interstitial atoms Si j , vacancy V, and O-complexes were evaluated to account for the annealing conditions to derive specific structural defects in the SiO2/Si wafer. A non-destructive method, which allows the determination of the internal friction difference ΔQ −1 /Q −1 0 of the elastic vibration of structural defects of dislocations with density N D and the depth of the broken layer h b , is offered for the SiO2/Si wafer. The method was developed, the installation was designed and manufactured for the excitation and registration of damped bending resonant oscillations in a SiO2/Si disc-shaped wafer with a thickness h SiO2 ≈ 100 nm, h is = 300 ÷ 500 × 103 nm, and diameter D = 60 ÷ 100 × 10−3 m to measure the structurally sensitive internal friction Q −1 in vacuum P ≈ 10−2 Pa. Measurement of the internal friction background Q −1 0 at harmonic frequencies f 0 and f 2 allowed us to experimentally determine the nodal lines of the oscillating disks.