Abstract
We studied the carrier transport through n-InSb-films sandwiched between two superconducting lead electrodes. These n-InSb-films were about 30 nm thick, polycrystalline and very highly doped (1021 cm−3). TheV(I)- and dV/dI (V)-characteristics indicated all the properties of Andreev-reflection (subharmonic energygap structures (SGS) and excess current) according to the theory of Octavio et al. (OTBK-model) [1, 2]. Our measurements show the temperature dependence of these structures and also the influence of magnetic fields up to 80 mT and give a further reference to the importance of Andreev-reflection in semiconductor-coupled superconducting junctions (SSmS junctions).
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