Abstract
Andreev reflection in a split-gate-fitted superconductor--normal-metal--superconductor junction is studied with retro property of Andreev reflection. As the normal metal, the junction uses a two-dimensional electron gas (2DEG) in a semiconductor heterostructure in the ballistic-transport regime. The differential resistance-voltage characteristics, measured as a function of gate voltage, show a clear change from current-deficit to excess-current characteristics. This change is attributed to the Andreev-reflected holes being focused on the quantum point contact defined in the 2DEG by the split gate.
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