Andreev-like Reflection in the Pfaffian Fractional Quantum Hall Effect

Abstract

We study tunnel transport between the edge of a Pfaffian fractional quantum Hall state and that of an integer quantum Hall state. Based on the duality argument between strong and weak tunnelings, we find that Andreev-like reflection appears for a strong tunneling regime. We calculate charge conductance in the weak and strong tunneling regimes for the low-voltage limit. In the weak tunneling limit, $\mathrm{d}I/\mathrm{d}V$ is proportional to $V^{1/\nu}$ with bias voltage $V$ and $\nu=1/2$. On the other hand, in the strong tunneling limit, $\mathrm{d}I/\mathrm{d}V$ is expressed by $(e^{2}/h)2\nu/(1+\nu)$ with correction term.