Abstract
Exact optical analysis of aluminum doped zinc-oxide (ZnO:Al) thin-films have been shown in [1], as function of reactive O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -and inert N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -gas additions to the inert Ar process-gas. Here, a theoretical model is introduced, which allows the determination of typical semiconductor parameters, by use of UV/Vis/NIR spectroscopy-a contact-free measurement method. In detail, effective dopant concentrations, n <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">e</sub> , in semiconducting thin-films, as well as mobilities, μ, drift velocities, v <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> , lifetimes, τ, and mean free paths, I, of electrons within these layers can be calculated. Sputtered aluminum-doped zinc-oxide (ZnO:Al) thin-films have been analysed with respect to reactive oxygen additions to the inert argon process-gas and with respect to substrate-temperatures. The effects of these two parameters on the above mentioned physical values have been investigated and discussed.
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