Analyzing Time‐Average Excitation Rate Among Quantum Dot Eigenstates Triggered by Time‐Dependent Noise Strength

Abstract

Present investigation rigorously explores the time‐average excitation rate (TAER) of ground‐state electronic population of GaAs quantum dot (QD) to the excited eigenstates. The QD confinement potential contains Gaussian impurity (the dopant) and Gaussian white noise (GWN). GWN can be categorized as either additive or multiplicative depending upon its way of attachment to the doped QD. The excitation occurs as soon as the noise strength begins fluctuating with time in periodic or random manner. The study highlights the coupled influence of the varying physical quantity, presence/absence of noise, the mode of attachment of noise to QD, and the nature of time‐fluctuation of the noise strength (periodic/random), and finally harnesses and tailors the features of the TAER profiles. The TAER plots unveil steady rise, steady fall, maximization (linked with the emergence of large nonlinear optical response), minimization, and saturation (linked with dynamic freezing). The findings appear to be significant in the practical usage of QD‐based devices.