Abstract
Single Wall Carbon Nanotubes exhibit outstanding contributions in the recent VLSI interconnections. Interconnects analyzed in VLSI circuits depends on the electrical properties of carbon nanotubes. Metallic carbon nanotubes are very distinct for their ballistic conductivity in nano level interconnections. Different peaks are analyzed in Raman spectroscopy technique for characterizing metallic carbon nanotubes. The performance analysis of metallic carbon nanotubes is compared with the conventional Cu interconnects. In this study we analyzed resistivity and capacitance of carbon nanotubes interconnects which indicates carbon nanotubes interconnect are the most prominent solution for the future VLSI technologies.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
