Abstract
This paper describes an analytical two-dimensional model for pn junction solar cell I-V characteristic. In order to solve the two-dimensional equations for the minority carrier concentration the Laplace transformation method is used. The model eliminates Hovel's assumptions concerning a one-dimensional model and provides an I-V characteristic that is simpler than those derived from the one-dimensional model. The method can be extended to any other device with two-dimensional symmetry.
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