Abstract
An analytical threshold voltage model for a junctionless double-gate MOSFET with localized charges is developed. The model is derived based on 2-D Poisson's equation with parabolic potential approximation. The proposed model is verified by device simulation results. Threshold voltage dependencies on various device parameters are also analyzed. The proposed model can be used to estimate the threshold voltage degradation as caused by hot carrier effects and to provide a guideline for the optimization of junctionless transistors.
Published Version
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