Analytical theory of crystal growth of two‐component systems I. Basic features and equilibrium properties

Abstract

AbstractThe basic features of an analytical theory of crystal growth for two‐component systems with atomically rough interfaces are developed in the framework of a multi‐layer SOS‐interface model using the concept of the theory of elementary rate processes. Attachment, detachment, and diffusional processes of the species are taken into account as interfacial elementary rate processes. Rate equations for these elementary rate processes are formulated. The rates are determined in terms of the change of the system free energy due to each specific elementary process using the principle of detailed balance. Especially, the equilibrium properties (interface profile, concentration profiles of the components, phase diagram) are described analytically and evaluated approximately in the continuous Bragg‐Williams approximation (CBWA) for ideal mixtures. The results of the interface model are discussed in comparison with those of the phenomenological theory.