Analytical study on temperature effect on piezoelectric exciton dissociation rate (Onsager dissociation rate)

Abstract

We discussed analytically the temperature effect on the piezoelectric exciton dissociation rate (Onsager dissociation rate, D on the p-n junction interface (hybrid inorganic-organic system). For high temperatures (\( T\gg 1\)), a power series expansion for D about a field parameter b (\( \ll 1\)) was used, resulting in \( D\cong\gamma/\frac{4}{3}\pi a^3 \cdot(1+b)\cdot 2\cdot n_e\). For low temperatures (\( T\ll 1\)), \( 1+b+ \frac{b^2}{3}+\ldots,\) resulted in an asymptotically complex value that approached zero, and allowed D to also approach zero. Therefore, it is suggested that high temperatures will be useful for verifying piezoelectric exciton dissociation theoretically.